Abstract

A β-diketone, 2-acetylfluorene-4,4,4-trifluorobutane-1,3-dione (HAFTFBD), and its three europium(III) complexes, Eu(AFTFBD)3⋅2H2O, Eu(AFTFBD)3(TPPO)2 and Eu(AFTFBD)3phen, were designed and synthesized, where TPPO was triphenylphosphine oxide and phen was 1,10-phenanthroline. The complexes were characterized by IR, UV-visible, photoluminescence (PL) spectroscopy and thermogravimetric analysis (TGA). The results show that the Eu(III) complexes exhibit a high thermal stability,and wide and strong excitation bands when monitored at 613 nm. Excited by ∼395 nm near UV light, the complexes emitted strong and characteristic red light due to f–f transitions of the central Eu3+ ion, and no emission from the ligands was found. The photoluminescence mechanism of the europium(III) complexes was investigated and proposed as a ligand-sensitized luminescence process. Among the three europium(III) complexes, Eu(AFTFBD)3phen exhibits the highest thermal stability and the most excellent photoluminescence properties. A bright red light-emitting diode was fabricated by coating the Eu(AFTFBD)3phen complex onto an ∼395 nm-emitting InGaN chip, and the LED showed appropriate CIE chromaticity coordinates (x=0.66, y=0.33). A white LED with CIE chromaticity coordinates (x=0.32, y=0.32) was prepared with Eu(AFTFBD)3phen as red phosphor, indicating that Eu(AFTFBD)3phen can be applied as a red component for fabrication of near ultraviolet-based white light-emitting diodes.

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