Abstract

A new type of inverter for low voltage and low power applications is proposed. It is designed so that the substrate bias voltage can be dynamically adjusted. The bulk is biased positively in the active mode to decrease the threshold voltage Vth and thus provide more output drive, while in the standby mode the substrate bias is not applied to maintain a high Vth, therefore reduce the leakage current. Comparison of performance between the proposed dynamic threshold inverter DTINV and conventional CMOS inverter are made.

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