A dual-unit pressure sensor for on-chip self-compensation of zero-point temperature drift

Abstract

A novel dual-unit piezoresistive pressure sensor, consisting of a sensing unit and a dummy unit, is proposed and developed for on-chip self-compensation for zero-point temperature drift. With an MIS (microholes inter-etch and sealing) process implemented only from the front side of single (1 1 1) silicon wafers, a pressure sensitive unit and another identically structured pressure insensitive dummy unit are compactly integrated on-chip to eliminate unbalance factors induced zero-point temperature-drift by mutual compensation between the two units. Besides, both units are physically suspended from silicon substrate to further suppress packaging-stress induced temperature drift. A simultaneously processes ventilation hole-channel structure is connected with the pressure reference cavity of the dummy unit to make it insensitive to detected pressure. In spite of the additional dummy unit, the sensor chip dimensions are still as small as 1.2 mm × 1.2 mm × 0.4 mm. The proposed dual-unit sensor is fabricated and tested, with the tested sensitivity being 0.104 mV kPa−1 3.3 V−1, nonlinearity of less than 0.08% · FSO and overall accuracy error of ± 0.18% · FSO. Without using any extra compensation method, the sensor features an ultra-low temperature coefficient of offset (TCO) of 0.002% °C−1 · FSO that is much better than the performance of conventional pressure sensors. The highly stable and small-sized sensors are promising for low cost production and applications.