Abstract
A Dual-gate graphene field effect transistor was fabricated with HfO2 and SiO2 as the back and top dielectric layers on silicon substrate, respectively. The CVD grown graphene was transferred a process by spin-coating a PMMA layer. The electrical properties of the graphene transistors were investigated. Ambipolar behavior of field effect transistor is demonstrated with the carrier mobility of the channel between 3000 to 4500cm2/Vs. It is found that the AZ5214 photoresist covered on graphene during the fabrication process induces its p-type doping and annealing can reduce the impurity concentration dramatically.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
