Abstract
We report on a dual-pass high current density resonant tunneling diode (RTD) for terahertz wave applications. This technique reduces the overall fabrication complexity and improves the reproducibility for creating low resistance ohmic contacts. With our dual-pass technique, we demonstrate accurate control over the final device area by measuring the RTD current–voltage characteristic during the fabrication process and guiding the emitter current through the full RTD structure with a second contact electrode on the collector side. We go on to show how we may extract important information about the RTD performance using this method.
Highlights
T HERE is currently a high demand for ultra-fast wireless communications due to the explosive growth in mobile data [1]
This fabrication technique allows accurate control over the final device area, and the formation of reproducible low resistance ohmic contacts to both the collector and emitter. This has been made possible by guiding the emitter current through the full resonant tunnelling diode (RTD) structure with a large second contact electrode on the collector side
From the measured I-V characteristic shown in Fig. 2(a), a peak-tovalley current ratio (PVCR) of 1.5 is obtained, which is in good agreement with the literature for similar high current density RTDs [12], [13]
Summary
T HERE is currently a high demand for ultra-fast wireless communications due to the explosive growth in mobile data [1]. This fabrication technique allows accurate control over the final device area (and characteristics), and the formation of reproducible low resistance ohmic contacts to both the collector and emitter.
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