Abstract
In this letter, we demonstrate the coexistence of Schottky diode performance and resistance switching (RS) behavior based on TiN/amorphous indium-gallium-zinc oxide/Cu device. Depending on the reverse voltage applied to the Cu electrode, the device itself can be obviously switched from the diode mode to the RS mode. The device shows outstanding diode features with a large rectification ratio up to $ {3}\times {10}^{ {6}}$ at ±1 V and a high forward current density of 100 A/cm2 at +1 V. Furthermore, repeatable and stable switching behavior with low voltage has also been observed by increasing the reverse forming voltage. The physical model of Schottky barrier and conductive filament is proposed to explain the coexistence phenomenon. These achievements increase the application diversity of the metal–oxide film and provide a great potential application in active-matrix flat-panel displays.
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