A dual doping nonvolatile reconfigurable FET

Abstract

In this work, we propose a dual doping based nonvolatile reconfigurable field effect transistor with source/drain (S/D) charge storage layers (DDN R-FET). It introduces nonvolatile charge storage layers on both source and drain sides as a floating program gate (FPG) instead of a program gate (PG) that needs independent power supply. The stored charges in the FPG are programmed by the control gate (CG). Therefore, the proposed DDN R-FET essentially requires only one independently powered gate to complete the reconfigurable operation. Moreover, by adjusting the charge stored in the FPGs, the CG can regulate the equivalent voltage in the FPG, which can promote the on-state current and reduce the generation of reversely biased leakage current at the same time. The physical mechanism has also been analyzed in details.