A dual‐band voltage‐controlled oscillator in 0.13 μm CMOS technology

Abstract

PurposeThe purpose of this paper is to design and implement a fully integrated low‐phase noise and large tuning range dual‐band LC voltage‐controlled oscillator (VCO) in 0.13 μm complementary metal oxide semiconductor (CMOS) technology.Design/methodology/approachTwo parallel‐connected single‐band VCOs are designed to implement the proposed VCO. Adopting a simple and straight‐forward architecture, the dual‐band VCO is configured to operate at two frequency bands, which are from 1.48 GHz to 1.78 GHz and from 2.08 GHz to 2.45 GHz. A band selection circuit is designed to perform band selection process based on the controlling input signal.FindingsThe proposed VCO features phase noise of −104.7 dBc/Hz and −108.8 dBc/Hz at 1 MHz offset frequency for both low corner and high corner end of the low‐band operation. For high‐band operation, phase‐noise performance of −101.1 dBc/Hz and −110.4 dBc/Hz at 1 MHz offset frequency are achieved. The measured output power of the dual‐band VCO ranges from −8.4 dBm to −5.8 dBm and from −9.6 dBm to −8.0 dBm for low‐band and high‐band operation, respectively. It was also observed that the power differences between the fundamental spectrum and the nearby spurious tone range from −67.5 dBc to −47.7 dBc.Originality/valueThe paper is useful to both the academic and industrial fields since it promotes the concept of multi‐band or multi‐standard system which is currently in demand in the telecommunication industry.