A DRV-based bit selection method for SRAM PUF key generation and its impact on ECCs

Abstract

- PUFs based on the power-up values of an array of SRAM cells are a popular solution to provide secure and low-cost key generation suitable for IoT devices. However, SRAM cells do not always power up to the same value due to external factors like noise, temperature, or aging. This results in a decrease of reliability for the SRAM PUF, an issue generally solved by employing complex Error Correction Codes (ECCs). However, ECCs significantly increase the cost of the complete system. A way to alleviate this issue is the use of bit selection methods, which increase the reliability of the SRAM PUF by using only the power-up values of the most reliable cells (i.e., the SRAM cells that consistently power up to the same value). In this work, the reduction in ECC complexity through a bit selection method based on the Data Retention Voltage metric is demonstrated.