Abstract
We have studied transport properties in the magnetoresistance for coupled quantum-dot array systems fabricated by a split-metal-gate technique on GaAs/AlGaAs 2DEG layers. Edge-channel transport has been observed at high magnetic fields in the dot array system and edge state de-population has been analyzed in order to determine the effective g-value and the local carrier concentration at the quantum point contacts. The gate-voltage dependence of the Zeeman splitting is discussed for the lower Landau levels. It can be expected that a large variation of the g-value as a function of the gate-voltage will be interesting for spintronics device applications.
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