Abstract
A novel double trench 4H-SiC metal-oxide-semiconductor field-effect transistor with integrated heterojunction (HJD-DTMOS) is proposed and numerically investigated in this paper. The integrated heterojunction diode (HJD) effectively suppress the turn-on of the intrinsic body PN diode in the reverse on-state of proposed HJD-DTMOS. Device simulation results show that the breakdown voltage (BV) of the proposed device is improved by about 3.4% compared with the those of the conventional SiC double trench MOSFET with almost no specific on-resistance degradation. And the reverse recovery time (t <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rr</inf> ) and the reverse recovery charge (Q <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rr</inf> ) both are reduced by 76% and 90%. Also, a feasible fabrication process method is provided for the proposed device.
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