A DLTS study of defects formed in silicon during ion beam mixing

Abstract

Ion beam mixing in Schottky barrier diodes (SBDs), achieved by implanting ions through the metal gate of the SBD, has been shown to cause substantial changes in its electrical properties. During the implantation structural damage is caused, both in the metal gate and in the Si substrate. In the latter this damage gives rise to electrically active defects. We report here on these defects caused by implanting 100 keV Si + ions through 400 Å thick Ni Schottky barrier diodes on n- and p-Si with doses ranging between 10 12 and 10 16 cm −2. The results obtained using deep level transient spectroscopy (DLTS) showed the presence of several implantation-induced defects. For some of them the DLTS “signatures” correspond to those of defects caused by high energy (1 Mev) electron irradiation. Further, IV and CV measurements in conjunction with isochronal annealing revealed a definite trend between the properties of the Schottky barrier diodes and the deep level defects caused by ion beam mixing.