A divide-by-2 static frequency divider with AlGaAs/GaAs HBTs technology

Xianjie Li ,Quan-Shu Wang Quan-Shu Wang,Wei-Ji Liu ,Qingmin Zeng ,Jin Guo ,Xiao-Chun Xu ,Chunguang Liang

doi:10.1109/icsict.2001.982147

A divide-by-2 static frequency divider with AlGaAs/GaAs HBTs technology

Xianjie Li , Quan-Shu Wang Quan-Shu Wang + Show 5 more

https://doi.org/10.1109/icsict.2001.982147

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Publication Date: Oct 22, 2001

Affiliation: Jilin University, Hebei Semiconductor Research Institute

#Static Frequency Divider #Heterojunction Bipolar Transistors + Show 8 more

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Abstract

A divide-by-2 Static frequency divider using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) was described based on a master-slave D flip-flops. For a HBT with a 3.5/spl times/8 /spl mu/m/sup 2/ emitter had a DC current gain of 30. The unity current gain cutoff frequency (F/sub t/) and the maximum oscillation frequency (F/sub max/) of the HBTs were extrapolated to about 40 GHz. The IC was tested from DC to 8 GHz and demonstrated proper function under a supply voltage of -7 V to -8 V.

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