Abstract
In this paper, a method for 0.1 µm InP HEMT parameters extraction using Full-wave Electromagnetic(FW-EM) simulation is proposed. The parasitic capacitances are divided into pad and electrode capacitances to describe the distributed effects. Based on the extrinsic equivalent circuit, five standards are proposed to determine the parasitic capacitances and inductances using FW-EM simulation. Additionally, as ohmic contact resistance cannot be acquired using FW-EM simulation, parasitic resistances are determined using a Cold-Fet method without forward gate bias. Multi-bias extraction for various device sizes has been used to validate the accuracy and robustness of the suggested extraction approach, and the results indicate good agreement from 0.1 to 40 GHz.
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