Abstract
We present a large signal power device model consisting of MEXTRAM BJT models of a small unit device and external lumped elements explaining all the parasitic effects resulting from the interconnection layout. The parasitic elements are included in the model in a distributed way. For the unit device, the device with an emitter size of 24 /spl mu/m/sup 2/ is modeled by a MEXTRAM 504 BJT model, which shows accurate high-current behaviors such as Kirk effect, high-injection effect, and quasi-saturation effect. The power device with an emitter size of 480 /spl mu/m/sup 2/ is designed to verify the model. DC, small signal, and large signal measurements are compared with the simulation results using the model; both results are quite well matched not only on DC and small signal characteristic, but also on large signal characteristic under a self-biasing condition with the same input and output matching impedances.
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