Abstract
This paper proposes a novel type of compact circuit model for silicon germanium (SiGe) heterojunction phototransistor (HPT) that is justified from the distributed nature of both its electrical and optical behaviors. The proposed model is based on a modified Ebers–Model structure and contains 28 different parameters. It is independent of the nature of the base bias (current or voltage), as opposed to existing models. The method to identify that the architecture of the model is original as it makes use of a drift–diffusion numerical simulation of a SiGe HPT adjusted to experimental data. A good fit of the model both in amplitude and phase is obtained through the nine optomicrowave S-parameters.
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