A Discussion of Electronic Optical Absorption Spectra of Nanocrystalline Silicon thin Films

Abstract

AbstractBoth fully crystallized nanocrystalline as-deposited silicon layers with an average grain size ranging between 6 and 80 nm and mixed-phase hydrogenated doped and undoped silicon films are studied at room temperature by Photothermal Deflection Spectroscopy (PDS), Transmission Spectroscopy and Spectroscopic Ellipsometry. The differences with regard to similar data obtained on monocrystalline and hydrogenated amorphous silicon are discussed, with an emphasis on the low-energy part of the 0.6-5.6 eV explored range.