Abstract
Abstract Tetravalent Ge4+ ion conduction in solids was first demonstrated by selecting a NASICON-type GeNb(PO4)3 solid and partially replacing P5+ ion in GeNb(PO4)3 with Si4+ ion to expand the crystal lattice, which allows for realization of a Ge4+ ion with high valence and electronegativity. Among the Ge1+x⁄4NbP3−xSixO12 solids prepared, it was found that Ge41⁄40NbP2.9Si0.1O12 (x=0.1) solid showed the highest Ge4+ ion conductivity.
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