Abstract
Inorganic semiconductors prepared from MOFs as sacrificial precursors are promising photocatalytic materials. In this work, the direct Z-scheme MoS2/NH2-MIL-68(In)-derived In2S3 (MoS2/In2S3) heterojunction composites have been synthesized by sulfidation treatment of MoS2/NH2-MIL-68(In) (MoS2/NM68) composites. Morphological and crystal structural results confirmed that MoS2 was uniformly dispersed in In2S3. According to the reduction for Cr(VI) experimental results, the photocatalytic performance of MoS2/In2S3 heterojunction composite under visible light irradiation is significantly better than that of pristine MoS2 and In2S3, respectively. In addition, the photocatalytic activities of the MoS2/In2S3 (II) at different pH and high concentrations of Cr(VI) were also investigated. This paper presents a novel approach to the construction of heterojunction photocatalytic materials using MOFs as sacrificial precursors.
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