A direct method to extract extrinsic capacitances of rf SOI MOSFETs using common source‐body and gate‐body configurations

Abstract

ABSTRACTA direct extraction method is newly proposed to determine all extrinsic capacitances including the drain‐source coupling capacitance in a buried oxide layer of RF SOI MOSFETs. This new method is based on Y‐parameter equations derived from two “off” state equivalent circuits under common source‐body and gate‐body configurations. Using this method, the gate voltage‐dependent extrinsic capacitance data are extracted and small‐signal equivalent circuit modeling is accurately performed. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2851–2853, 2016