Abstract
A direct comparison has been made between the properties and implant behavior of undoped semi-insulating (SI) low- and high-pressure liquid encapsulated Czochralski (LEC) GaAs. Although the properties of high-pressure LEC had previously been well characterized, this is the first detailed study of the quality of low-pressure LEC material. It is shown that both material types are similar in structural quality, purity, and in the characteristics of conducting layers formed by direct ion implantation. Arsenic-rich melts and B 2 O 3 with greater than 500-ppm H 2 O content are required for obtaining reproducible and stable SI behavior growing from quartz crucibles.
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