Abstract
A direct comparison has been made between the properties and implant behavior of undoped semi-insulating (SI) low- and high-pressure liquid encapsulated Czochralski (LEC) GaAs. Although the properties of high-pressure LEC had previously been well characterized, this is the first detailed study of the quality of low-pressure LEC material. It is shown that both material types are similar in structural quality, purity, and in the characteristics of conducting layers formed by direct ion implantation. Arsenic-rich melts and B 2 O 3 with greater than 500-ppm H 2 O content are required for obtaining reproducible and stable SI behavior growing from quartz crucibles.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
