Abstract
The postbreakdown current in metal-oxide-semiconductor structures with ultrathin silicon dioxide layers is investigated within the framework of a diodelike conduction model with high series resistance. The diodelike behavior is ascribed to the contact effect between the semiconductor electrodes, and the series resistance is mainly attributed to the crowding of the current lines or funneling of the energy states at the constriction which represents the breakdown path. It is shown how this model is able to capture some distinctive features exhibited by the normalized differential conductance and how the model parameters can be extracted from the experimental characteristics without invoking the solution of the generalized diode equation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
