Abstract
Recently, NAND memory has applied MLC to store multi-bit data in one cell [1–2]. Therefore, it is necessary to generate accurate word-line (WL) and bit-line (BL) voltages to perform normal NAND memory operation. However, as shown in Fig. 1(a), since the threshold voltage $(\mathrm{V}_{T})$ distribution of NAND memory changes with temperature, BL and WL voltage generators need to compensate for temperature.
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