Abstract
A p-type MOSFET based on a heterointerface of hydrogenated-diamond transfer doped with MoO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (Diamond:H/MoO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) is demonstrated for the first time. This is an important new heterostructure system due to its potentially improved temperature stability as compared with the better established Diamond:H/H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O system. MOSFETs using HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> as gate insulator show excellent output characteristics and gate control over the 2-D hole gas at the Diamond:H/MoO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> interface. In 3.5-μm gate length devices, we obtain a maximum drain-current ON-OFF ratio of three orders of magnitude and a maximum transconductance of 2.5 μS/μm.
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