A diagrammatic approach to single-electron spintronics and a new analytical model for ferromagnetic single-electron transistors

Abstract

In this paper, we propose a diagrammatic approach to single-electron spintronics and develop a new analytical model for ferromagnetic single electron transistors (FSETs) using the proposed approach. Before this, we have reported an analytical model for FSET which was the only analytical model for FSETs introduced. It was a zero temperature one and was based on orthodox theory by solving several long equations simultaneously such that if one deals with a large system which includes several devices, number of complex equations is increased significantly. Here, the new proposed analytical model uses a much simpler diagrammatic approach and less calculation compared to the existing analytical model. We have used the model for two types of island material based on that spin splitting be negligible or not. This model provides a clear physical insight into single-electron spintronics and has been verified against the existing analytical model and numerical simulations. A good agreement has been shown and the model validity has been established.