Abstract

We propose and theoretically analyze a DFB semiconductor laser monolithically integrated with anti-symmetric Bragg grating (ASBG) modulator. A &pi; phase shifted Bragg grating with single-mode ridge waveguide and an ASBG with multimode waveguide supporting the fundamental transverse electric (TE<sub>0</sub>) mode and the first order transverse electric (TE<sub>1</sub>) mode, are joined by a tapered waveguide. After adding a phase shift section between the taper and ASBG, the electro-optical (E/O) response of ASBG modulator increases by 37.9% compared to the normal Bragg grating modulator (BGM), and becomes sensitive to the effective refractive index change of the straight waveguide. The proposed integrated device can be applied in sensing.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.