A device model for an ion-implanted MESFET with Half-Pearson and Half-Gaussian distribution under post-anneal conditions

Abstract

A model is developed for an ion-implanted long channel silicon MESFET in terms of Half-Pearson-IV and Half-Gaussian distribution. Reasonable approximations have been made to obtain simplified solution of Poisson's equation. It is seen that approximate Gaussian profile and exact Half-Pearson-IV Half-Gaussian profile gives exactly the same I/sub d/-V/sub d/ curves. It is also observed that the threshold voltage gets reduced in the later case. >