Abstract
The results of tests of a fast photodetector based on a nanographite film grown on a silicon substrate are presented. The temperature dependence of the optoelectric signal from the photodetector in the range 300–800 K has been studied under the vacuum conditions. It has been shown experimentally that, when the temperature increases from 300 to 625 K, the photodetector’s sensitivity decreases by approximately 30%. When the temperature increases to higher values, the optoelectric-signal amplitude drops linearly and is halved at T = 740 K as compared to room temperature. Extrapolation of the experimental data shows that the optoelectric response of the photodetector disappears at T > 1000 K.
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