A determinist method solving the Wigner transport equation for quantum transport in silicon nanowires

Abstract

A determinist method is presented for solving the steady-state Wigner transport equation in nanoscale MOSFET devices. The three-dimensional quantum transport is computed by solving the coupled 3D Poisson and 2D Schrödinger equations (by a mode-space approach) with the 1D Wigner transport equation along the source-drain direction. Numerical simulations are performed to demonstrate the ability of the Wigner function formalism to correctly reproduce quantum transport properties in gate-all-around silicon nanowire MOSFETs.