Abstract
We studied GaN nanorods grown by hydride vapour phase epitaxy processes to identify optimal growth conditions that yield nanorods appropriate for use in nanodevices. The growth temperature was varied over the range 625–670 °C, and the morphology of the samples changed with increasing growth temperature. GaN nanorods formed at growth temperatures of 645 °C on a Si(111) substrate. At a fixed growth temperature of 645 °C, the HCl:NH3 gas flow ratio was adjusted from 1:37 to 1:41. GaN nanorods with a small diameter of 26 nm formed at a HCl:NH3 ratio of 1:38. Individual GaN nanorods clearly grew along the axial direction, perpendicular to the substrate. Cathodoluminescence measurements at room temperature revealed a red shift as the acceleration energy was increased to 15 keV, possibly associated with the internal electric field.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
