A Deposition Mechanism of SiO2 Chemical Vapor Deposition Using Tetra-Isocyanate Silane and Water

Abstract

The deposition characteristic of SiO2 chemical vapor deposition (CVD) using tetra-isocyanate silane can be explained by the adsorption of source gases on the substrate surface. The deposition reaction occurs in the adsorbed layer. The deposition rate of the CVD was calculated under the assumption that source gases follow the BET isotherm theory independently. The dependence of deposition rate on temperature was well consistent with the experimental data by using a reaction constant VSiO2 =1000 nm/min.