A density functional tight-binding based strategy for modeling ion bombardment and its application to Ar bombardment of silicon nitride

Abstract

In many modern applications, it is important to understand mechanisms of non-equilibrium chemistry and physics that are driven by low energy ion bombardment of solid surfaces. However, the study of these processes has been challenging as it demands a relatively unique balance between chemical fidelity and computational cost. To this end, we have proposed and constructed a new, high-throughput simulation pipeline based on density functional tight binding simulations. Additionally, we have extended the parameter set pbc-0-3 with the addition of Ar, thereby enabling the simulation of Ar bombardment. This pipeline was then applied to study the structural and compositional evolution of silicon nitride (SiN) under Ar bombardment. We identified a possible rate limiting step of bombardment-driven sputtering of SiN and suggested underlying mechanisms of Si and N removal. Damage from the bombardment, including generation of surface defects and Ar implantation, are further discussed. These findings and the newly developed simulation framework will serve as a useful foundation for further research in processes driven by ion bombardment.