Abstract
The introduction of two new defects, both 〈100〉 split-interstitials, can explain the experimental results obtained from annealing studies on undoped and tellurium doped gallium arsenide. This model concludes that the arsenic and gallium Frenkel reactions only occur at annealing temperatures above 4̃00 and 9̃00°C respectively and suggests that gallium diffuses by occupying split-interstitial sites. This model also suggests that interestitial arsenic may occupy the hexagonal interstitial sites.
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