Abstract

Defect formation and annihilation in ultra‐shallow junctions (USJs) during an annealing process is characterized by deep level transient spectroscopy (DLTS). A difference in the recovery of implantation damage was clearly identified between samples with and without pre‐amorphization‐implantation (PAI). DLTS depth profiles reveal that the defects are formed at the region ten‐times deeper than implanted depth. The photoluminescence (PL) intensity probing of the region having defects distinctly correlates to the quantity of defects detected by DLTS.

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