Abstract
Deep level traps are observed in silicon that has been implanted with high doses of arsenic and subsequently annealed by rapid thermal annealing. The doses studied create enough damage to form a surface amorphous layer. Annealing temperatures, implant fluence, and the presence of a surface amorphous layer contribute to the type of trap observed. These results show evidence for a clustering/declustering mechanism of arsenic in silicon during rapid thermal annealing.
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