A deep level transient spectroscopic study of boron-ion-implanted single quantum wells

Abstract

The defects induced by boron-ion implantation with a relatively low dosage of in single quantum wells are studied by deep level transient spectroscopy (DLTS). For low Ge content x, a defect level at an energy of 0.52 eV above the silicon valence band edge was found in the well region and its boundaries. For samples with higher Ge content, such that the strain is released, an electron trap rather than is formed by the ion implantation. Rapid thermal annealing at removes most of the defects induced by the ion implantation without changing the properties of the quantum well.