A dc model for partially depleted SOI laterally diffused MOSFETs utilizing the HiSIM-HV compact model

Abstract

This paper presents a subcircuit compact model to study the dc characteristics of a partially depleted (PD) SOI laterally diffused metal oxide semiconductor field effect transistor (LDMOSFET) utilizing the HiSIM-HV compact model. Our model accounts both for the high-voltage and the floating-body effects such as the quasi saturation effect, the impact ionization in the drift region and the famous kink effect. The high-voltage effects, due to the surface MOS region of PD SOI LDMOSFET, are modeled using the HiSIM-HV model. The HiSIM-HV model, a surface-potential-based compact model, is used as a baseline model as it determines the potential consistently in the complete PD SOI LDMOSFET. And, to incorporate the floating-body effects into the HiSIM-HV model, we have used the same approach as used in developing BSIMSOI model. It is shown that to model the floating-body effects, mainly the kink in the output characteristics, the current due to the impact ionization in the drift region (I KIRK ) needs to be accurately modeled. An external current controlled current source (CCCS) is included in the proposed subcircuit model to model I KIRK accurately. The model is validated for a set of channel and drift lengths to demonstrate the scalability of the model. The accuracy of the proposed subcircuit model is verified using 2-D numerical simulations.