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Abstract
Extrinsic parasitic series resistance and mobility degradation are two important parameters limiting the performance of multifinger microwave MOSFETs. In this paper, we present a method to extract these parameters from measured drain-voltage versus gate-voltage characteristics at given constant values of drain current. Measured data of multifinger microwave MOSFETs are used to test and verify the developed method. The method requires only simple dc measurements on a single test device.
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