Abstract
We present dC/dV analysis based on the capacitance-voltage (C–V) measurement of quantum-dot light-emitting diodes (QLEDs), and find that some key device operating parameters (electrical and optical turn-on voltage, peak capacitance, maximum efficiency) can be directly related to the turning points and maximum/minimum of the dC/dV (versus voltage) curve. By the dC/dV study, the behaviors such as low turn-on voltage, simultaneous electrical and optical turn-on process, and carrier accumulation during the device aging can be well explained. Moreover, we perform the C–V and dC/dV measurement of aged devices, and confirm that our dC/dV analysis is correct for them. Thus, our dC/dV analysis method can be applied universally for QLED devices. It provides an in-depth understanding of carrier dynamics in QLEDs through simple C–V measurement.
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