Abstract
This paper presents a fully-integrated D-band bistatic frequency-modulated continuous-wave radar transceiver (TRX) chip based on 130 nm SiGe BiCMOS technology. The TRX chip consists of an active IQ modulator and an IQ down-conversion mixer. It is based on a χ 6 frequency multiplier chain, with a 40-GHz frequency doubler and a 120-GHz frequency tripler. The IQ signals are generated by a capacitively loaded folded 90° hybrid coupler. The entire chip is optimized for wideband operation. The TRX chip and the circuit break-outs are characterized on wafer. The TRX chip demonstrates state-of-the-art performance with a peak output power of 11 dBm and a 3-dB bandwidth of 30 GHz. The on-chip receiver provides a measured conversion gain of around 15 dB and a simulated minimum noise figure of 8 dB, with a 1-dB input compression point of −7.5 dBm. The IQ receiver shows a good balanced behavior with an average amplitude imbalance of 0.5 dB and a phase variation from 93° to 98° throughout the 3-dB bandwidth. The chip consumes a total DC power of 825mW and has an area of 1.964 χ 1.964mm2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
