A D-Band Magnetoelectric Dipole Antenna-in-Package (AiP) Implemented on BT-Based Organic Substrate

Abstract

A high gain, wide bandwidth (BW), and low-profile <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$D$ </tex-math></inline-formula> -band magnetoelectric dipole antenna-in-package (AiP) is proposed in this article. The unit antenna with a cavity backed slot is first evaluated by a substrate integrated waveguide (SIW) feed structure. The simulated impedance BW of the unit antenna covers 27 GHz from 132 to 159 GHz with stable broadside radiation patterns. Then, a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$4\times $ </tex-math></inline-formula> 2 array based on the proposed unit antenna is designed and verified on a four layer BT-based organic substrate. The array design is composed of an isolation, a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2\times $ </tex-math></inline-formula> 2 subarray, a two-way SIW power divider, and a probe pad to SIW transition. The <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2\times $ </tex-math></inline-formula> 2 subarray is realized by a four-way broad wall coupler with a V-junction design in particular. Tested by probing on substrate in the direct far-field chamber, the measured impedance BW covers 23.4 GHz from 135.4 to 158.8 GHz with a peak gain of 14.1 dBi at 150 GHz. The average of measured gains within the 130–160-GHz band is 12 dBi. Modeled with the dimensions of structural analysis results from optical microscope (OM) and cross-sectional scanning electron microscope (SEM) inspection, the post-simulation result shows a good agreement with the measurement result, including impedance BW, radiation patterns, and gains. This article demonstrates that the proposed AiP using the low-cost BT-based substrate manufacturing technology can be a good candidate for the future <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$D$ </tex-math></inline-formula> -band applications.