Abstract
This paper propose a novel high-order curvature-corrected CMOS bandgap reference (BGR) utilizing the negative feedback structure. The innovative negative feedback bandgap core not only compensates the exponential nonlinearity of VBE but also improves the power supply rejection ratio (PSRR) and line regulation. The proposed BGR is analyzed and implemented in 0.35-μm CMOS process. Experimental results of the BGR indicate that a minimum temperature coefficient (TC) of 13ppm/°C @−40°C to 180°C, a PSRR of −64dB @ 100Hz, and the 5.2uV/V line regulation (LNR) from 3V to 3.6V supply voltage at room temperature. The active area of the presented BGR is 133μm×300μm.
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