Abstract
A linear bypass circuit was developed to realize the high stability flat-top pulsed magnetic field (FTMPF) powered by battery-bank at the Wuhan National High Magnetic Field Center (WHMFC) in 2018. It mainly consists of the insulated-gate bipolar transistors (IGBTs) operating in the active region and a power resistor connected in series with the IGBTs. However, the terminal voltage of the IGBTs is high due to the operation in active region, which limits their through-current capability. In this paper, an approach for injecting current to the power resistor is proposed to reduce the terminal voltage of the IGBTs. Compared with the original technology, the through-current capability of the IGBTs will be enhanced greatly and the regulation scope of the FTPMF system will be expanded with the same number of IGBT. The method is discussed in detail and the number of IGBT is reduced from 35 to 8 in achieving an FTPMF of 40 T.
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