Abstract
Recently, resistive random access memory (RRAM) has become an important device for nonvolatile memory and neuromorphic computing. Herein, Cu/Hf0.5Zr0.5O2 (HZO)/GeS/Pt and Cu/GeS/Pt devices are fabricated and the electrical characteristics are compared in detail. The experimental results show that the when one oxide layer HZO is inserted into the Cu/GeS/Pt structure, the double‐layer memristor exhibits a high resistance ratio between the high‐resistance and low‐resistance states, and high reliability, relatively concentrated set and reset threshold voltage distribution, and a fast turn‐on speed can be reached as low as 10 ns. Interestingly, the function of simulating biological synapses and plasticity, including spike‐time‐dependent plasticity (STDP) and paired pulse promotion (PPF), can be emulated in the memristor devices, which is of great significance to the development of artificial synapses.
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