Abstract
A electroplating solution applicable to porous silica ultralow- films without pore sealing was investigated. A suppressor which causes permeation of electroplating solution was replaced by polyethylene glycol (PEG) with specific molecular weight (Mw). Transmission electron microscopy observation revealed that permeation by the solution into the porous silica layer can be suppressed by decreasing the molecular weight of the PEG suppressor in the electroplating solution. A electroplating solution using PEG with was examined for the low- porous silica/ single-damascene integration process of wafer. The filling characteristics in trenches and the uniformity of film thickness were investigated. Interline leakage current on low- damascene interconnects was successfully reduced by six orders of magnitude using this plating solution compared with the conventional solution.
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