A CTL-free homo-heterojunction antimony chalcogenide solar cell: Theoretical study

Abstract

Exploring antimony chalcogenide as photovoltaic (PV) absorber material for solar cell is an appealing strategy. However, the conversion efficiency (η) of antimony chalcogenide solar cells including antimony selenide (Sb2Se3), antimony sulfide (Sb2S3) and antimony sulfide–selenide (Sb2(S,Se)3) lag far behind their Shockley−Queisser limit efficiency. Generally, the device PV performance of thin film heterojunction solar cells is mainly affected by the material properties of each functional layer, as well as the device architecture and heterointerface characteristics. Herein, a novel homo-heterojunction antimony chalcogenide solar cell without any carrier transport layer (CTL) consisting of FTO/(n)Sb2Se3/(p)Sb2Se3/(p)Sb2S3/Metal has been proposed. The influence of thickness, doping concentration and bulk defect density of the functional layer materials, the interface defect density at (p)Sb2Se3/(p)Sb2S3 heterointerfaces, and back contact metal work function on device PV performance have been theoretically analyzed utilized wxAMPS software. After optimization, the proposed solar cell has an open-circuit voltage (Voc) of 0.885 V, a short-circuit current density (Jsc) of 36.14 mAcm−2, a filling factor (FF) of 84.30 %, and a η of 26.97 %. These results indicate that the novel homo-heterojunction antimony chalcogenide solar cell without any CTL have the potential to become a high-efficiency PV device.