A C–Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application

Abstract

In this letter, we demonstrate a new binary ovonic threshold switching (OTS) selector device scalable down to ø30 nm based on C–Te. Our proposed selector device exhibits outstanding performance such as a high switching ratio (Ion/Ioff > 105), an extremely low off-current (∼1 nA), an extremely fast operating speed of <10 ns (transition time of <2 ns and delay time of <8 ns), high endurance (109), and high thermal stability (>450 °C). The observed high thermal stability is caused by the relatively small atomic size of C, compared to Te, which can effectively suppress the segregation and crystallization of Te in the OTS film. Furthermore, to confirm the functionality of the selector in a crossbar array, we evaluated a 1S-1R device by integrating our OTS device with a ReRAM (resistive random access memory) device. The 1S-1R integrated device exhibits a successful suppression of leakage current at the half-selected cell and shows an excellent read-out margin (>212 word lines) in a fast read operation.