Abstract
AbstractA cryogenic measurement setup for characterization microwave devices from room to cryogenic temperatures is presented. The setup allows testing microwave devices at variable temperatures ranging from 300 to 77 K. Frequency doubler (94/188 GHz) has been cooled to 77 K and peak efficiency of 32% at an input‐power level of 207 mW is achieved. For verification experimental results the millimeter‐wave GaAs Schottky barrier diode model is developed for CAD simulator. The simulated peak efficiency is 37% at 77 K. The estimation of simulated and measured data of the doubler efficiency versus temperature has the same trend from 77 to 300 K which confirmed the cryogenic measurement setup applicability.
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