Abstract
We report on cross-sectional scanning tunneling microscopy studies of a quantum dot infrared photodetector structure consisting of multiple InGaAs quantum wells containing InAs quantum dots and separated by GaAs. We have investigated the composition and size distribution of the InAs quantum dots in this structure. Using cross-sectional scanning tunneling microscopy images displaying atomic resolution, we reveal that the InAs quantum dots are strongly intermixed with the InGaAs quantum well layer. We estimate the size distribution of the dots and find this to be nonuniform. Further, defects related to dopants introduced in the structure are identified and their concentration is estimated.
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